Biography：
Lida Xu received his Ph.D. degree from the Institute of Microelectronics, Chinese Academy of Sciences in 2025. His doctoral research focused on high-temperature SOI devices and processor design. After graduation, he joined the Institute of Computing Technology, Chinese Academy of Sciences, as an engineer, mainly engaged in work related to open-source chips. He was awarded the National Scholarship for Undergraduates in 2019 and the National Scholarship for Doctoral Students in 2024.
Research area：
High-reliability integrated circuit, open-source IP and SoC chip, digital chip back-end design
Selected papers：
1. Lida Xu, Zewen Cao, Hualong Zhao, Zhuo Peng, Yuchi Miao, Chunan Zhuang, Hongrui Ruan, Yuying Dong, Chuanbin Zeng, Bo Li and Jiajun Luo. RIVL: A Low-cost SoC Agile Development Platform for Multiple RISC-V Processors Design and Verification[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 72, no. 4, pp. 1668-1678, April 2025.
2. Lida Xu, Linchun Gao, Tao Ni, Juanjuan Wang, Zewen Cao, Yifan Li, Xueqin Li, Runjian Wang, Xiaojing Li, Weiwei Yan, Jianhui Bu, Duoli Li, Chuanbin Zeng, Bo Li and Jiajun Luo. High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model[J]. IEEE Transactions on Electron Devices, vol. 70, no. 9, pp. 4786-4792, Sept. 2023.
3. Lida Xu, Linchun Gao, Tao Ni, Juanjuan Wang, Shanshan Zhao, Haoyi Zhang, Yifan Li, Runjian Wang, Xiaojing Li, Weiwei Yan, Duoli Li, Jianhui Bu, Chuanbin Zeng, Bo Li, Zhijie Wang, Fazhan Zhao, Jiajun Luo, Zhengsheng Han. Study on low rate of change characteristics of saturation output current of 28 nm UTBB FDSOI at 300°C high-temperature[J]. Journal of Physics D: Applied Physics, 2023, 56(6), 075103.
4. Zewen Cao, Lida Xu, Zhuo Peng, Yuying Dong, Hongrui Ruan, Chuanbin Zeng, Hualong Zhao and Jiajun Luo. MergFS: Efficient Bridging of a 32-bit High-Speed Intra-Core Bus to a 64-bit Low-Speed AHB-Lite Bus[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2025.
5. Yifan Li, Lida Xu, Tao Ni, Juanjuan Wang, Linchun Gao, Juanjuan Wang, Quan gang Ma, Zhijie Wang, Zhengsheng Han. The heat dissipation path of self-heating effects for the SOI MOSFET by considering the BOX layer and the TiN barrier layer[J]. Journal of Physics D: Applied Physics, 2024, 57(17), 175101.
